Persamaan Ic Irfz44n

Persamaan Ic Mosfet Dan Scr 10/3/2019 Persamaan transistor: nomor transistor: eropa: amerika: bc107 bc108 bc109 bc147 bc148 bc149 bc171 bc172 bc173 bc182 bc183 bc184 bc207 bc208 bc209 bc237 bc238 bc239 bc317 bc318 bc319: bc107 bc107 bc109 bc147 bc147 bc149 bc239 bc237 bc239 bc237 bc237 bc239 bc207 bc207 bc209 bc237 bc237 bc239 bc167 bc167 bc169. N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A.

Irfz44n.pdf Size:100K inchangesemiconductor INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage-: VDSS= 55V(Min) Static Drain-Source On-Resistance: RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor.

Type Designator: IRFZ44N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 41 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 62 nC

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: TO220AB

IRFZ44N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ44N Datasheet (PDF)

0.1. irfz44ns 1.pdf Size:57K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

0.2. irfz44n 1.pdf Size:52K _philips

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

0.3. irfz44ns 1.pdf Size:57K _international_rectifier

0.4. irfz44npbf.pdf Size:226K _international_rectifier

PD - 94787BIRFZ44NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 17.5ml Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

0.5. irfz44n 1.pdf Size:52K _international_rectifier

Persamaan Ic And Transistor - Discourse.cornerstone.co.uk

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0.6. irfz44ns.pdf Size:151K _international_rectifier

PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee

0.7. irfz44n.pdf Size:100K _international_rectifier

PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

0.8. irfz44nlpbf irfz44nspbf.pdf Size:334K _international_rectifier

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

0.9. irfz44npbf.pdf Size:150K _infineon

PD - 94787IRFZ44NPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 17.5m Fully Avalanche RatedG Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely

0.10. irfz44nspbf irfz44nlpbf.pdf Size:334K _infineon

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

0.11. lirfz44n.pdf Size:252K _lrc

LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 10

0.12. irfz44ns.pdf Size:257K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet Persamaan Transistor

0.13. irfz44n.pdf Size:100K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

Datasheet: IRFZ40, IRFZ40FI, IRFZ42, IRFZ44, IRFZ44A, IRFZ44E, IRFZ44EL, IRFZ44ES, 2SK2837, IRFZ44NL, IRFZ44NS, IRFZ45, IRFZ46N, IRFZ46NL, IRFZ46NS, IRFZ48N, IRFZ48NL.

LIST

Last Update

The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V. However a driver circuit is needed if the MOSFET has to be switched in completely.

Pin Configuration

Pin Number	Pin Name	Description
1	Gate	Controls the biasing of the MOSFET
2	Drain	Current flows in through Drain
3	Source	Current flows out through Source

Features

Small signal N-Channel MOSFET
Continuous Drain Current (ID) is 49A at 25°C
Pulsed Drain Current (ID-peak) is 160A
Minimum Gate threshold voltage (VGS-th) is 2V
Maximum Gate threshold voltage (VGS-th) is 4V
Gate-Source Voltage is (VGS) is ±20V (max)
Maximum Drain-Source Voltage (VDS) is 55V
Rise time and fall time is about 60ns and 45ns respectively.
It is commonly used with Arduino, due to its low threshold current.
Available in To-220 package

Note: Complete Technical Details can be found at the IRFZ44N datasheet given at the end of this page.

Alternatives for IRFZ44N

IRF2807, IRFB3207, IRFB4710

Where to use IRFZ44N MOSFET

The IRFZ44N is known for its high drain current and fast switching speed. Adding to that it also has a low Rds value which will help in increasing the efficiency of switching circuits. The MOSFET will start turning on with a small gate voltage of 4V, but the drain current will be maximum only when a gate voltage of 10V is applied. If the mosfet has to be driven directly from a microcontroller like Arduino then try the logic level version IRLZ44N mosfet.

Difference between IRLZ44N and IRFZ44N Mosfet

The IRLZ44N and IRFZ44N MOSFETs are often confused among each other and used incorrectly. The IRLZ44N is a Logic level Mosfet with a very low gate threshold voltage of 5V, meaning the MOSFET can be fully turned on with just 5V on its gate pin which avoids the need for a driver circuit.

The IRFZ44N on the other hand requires a gate driver circuit if the MOSFET has to be turned on completely using a microcontroller like Arduino. However it does turn on partially with direct 5V form a I/O pin, but the output drain current will be limited.

How to use IRFZ44N MOSFET

Unlike transistors MOSFET’s are voltage controlled devices. Meaning, they can be turned on or turned off by supplying the required Gate threshold voltage (VGS). IRFZ44N is an N-channel MOSFET, so the Drain and Source pins will be left open when there is no voltage applied to the gate pin. When a gate voltage is applied these pins gets closed.

If it is required to be switched with Arduino, then a simple drive circuit using a transistor will work to provide the required gate voltage to trigger the MOSFET to open fully. For other switching and amplifying applications, a dedicated MOFET Driver IC is required.

IRFZ44N with 5V gate (Arduino)

IRFZ44N

If the MOSFET gate pin is directly connected to an I/O pin of a microcontroller like Arduino, PIC etc. Then it will not open completely and the maximum drain current will depend on the voltage applied to the gate pin. The below graph shows how much drain current is permitted for gate threshold voltage from 4V to 10V.

As you can see the MOSFET opens completely only when the gate voltage is around 10V. If it is somewhere around 5V then the drain current is limited to 20A and so on.

Applications

JUAL IRFZ44n,BELI IRFZ44n,HARGA IRFZ44n,DATASHEET IRFZ44n ...

Switching high power devices
Control speed of motors
LED dimmers or flashers
High Speed switching applications
Converters or Inverter circuits

2D model of the component

If you are designing a PCB or Perf board with this component then the following picture from the Datasheet will be useful to know its package type and dimensions.

See Full List On Alldatasheet.com

IRFZ44N MOSFET Datasheet